Title: IRFZ24N MOSFET Datasheet
Type Designator: IRFZ24N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Electrical Specifications:
Maximum Power Dissipation (Pd): 45 W
Maximum Drain-Source Voltage (|Vds|): 55 V
Maximum Gate-Source Voltage (|Vgs|): 20 V
Maximum Gate-Threshold Voltage (|Vgs(th)|): 4 V
Maximum Drain Current (|Id|): 17 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 20 (max) nC
Rise Time (tr): 34 ns
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm
For more detailed information about the IRFZ24N MOSFET, you can refer to the datasheet available at: Link to Datasheet
